Empowering Connectivity: RF Gallium Nitride Market on Track for $2.8 Billion by 2028
With a projected value of USD 2.8 billion by 2028, the global RF Gallium Nitride (GaN) Market is expected to experience significant expansion from its estimated USD 1.5 billion valuation in 2023. Over the course of the forecast period, this projected growth translates into a strong compound annual growth rate (CAGR) of 12.9%. Technological developments, the growing need for high-frequency and high-power devices, and the broad use of GaN technology in a variety of industries, including the automotive, aerospace and defence, and telecommunications sectors, are all considered contributing factors to the market value increase. The market is anticipated to experience substantial growth in the upcoming years as GaN continues to establish itself as a favoured material for RF applications because of its excellent qualities, such as high electron mobility and thermal stability.
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There are multiple variables that contribute to the growth of the GaN ecosystem, which in turn drives the increasing demand for RF Gallium Nitride (GaN) devices. GaN's high electron mobility and power efficiency make it suitable for radiofrequency applications, which has fueled its growth in a variety of industries. The growing usage of GaN RF semiconductor devices in aerospace, defence, and military applications—where dependable and strong performance is critical—is especially noteworthy. This increase in demand is a result of the increased awareness of GaN technology's potential to satisfy the demanding needs of these industries, which has elevated it to a prominent position in the RF market.
RF Gallium Nitride Market Report Scope:
Report Coverage | Details |
Market Revenue in 2023 | $1.5 billion |
Estimated Value by 2028 | $2.8 billion |
Growth Rate | Poised to grow at a CAGR of 12.9% |
Market Size Available for | 2019–2028 |
Forecast Period | 2022–2028 |
Forecast Units | Value (USD Million/Billion) |
Report Coverage | Revenue Forecast, Competitive Landscape, Growth Factors, and Trends |
Segments Covered | By Device, Wafer Size, End User and Region |
Geographies Covered | North America, Europe, Asia Pacific, and Rest of World |
Key Market Challenge | High material and fabrication costs |
Key Market Opportunities | Evolving renewable energy applications of GaN |
Key Market Drivers | Advantage of GaN over traditional SI |
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By Wafer Size: 200 and more to account for a larger market share during the forecast year.
The biggest market share is anticipated to be held by the GaN wafers sized 200 and above in 2028. Over the course of the forecast period, this category is anticipated to increase at the highest rate. These bigger wafers (200 and larger) allow for the manufacturing of more devices in a single batch, which increases manufacturer productivity. As a result, this scalability helps to lower the 6-inch wafers' total manufacturing costs, making them one of the most affordable options on the GaN wafer market. Because larger wafer sizes offer cost and productivity advantages, many businesses have redirected their efforts towards creating semiconductor devices based on GaN wafers measuring 6 inches and greater.
By Device Type: Integrated RF device segment to account for a larger market share in the forecasted year.
The integrated radio device market is expected to take the lead and account for a higher portion of the market by 2028. Integrated devices, which combine several components such as transistors, diodes, and resistors onto a single chip, represent a significant leap in semiconductor technology. The integration of separate components results in a reduction of the device's size while simultaneously improving its efficiency and durability. In particular, RF GaN integrated devices, with their improved power density, efficiency, and linearity, have completely changed the field of RF and microwave electronics. These devices are widely used in many different industries, such as satellite communications, wireless communications, radar systems, and defence, where their superior performance and small size make them indispensable parts of sophisticated electronic systems.
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By End Use: telecom infrastructure segment to account largest market share during the forecasted year.
The telecom infrastructure category is expected to hold the greatest market share and lead the RF GaN market during the forecast period. GaN technology's remarkable high-power and high-frequency performance advantages have led to its significant penetration into a variety of base stations. Antennas are used by base stations, which are essential parts of cellular networks, to send and receive signals from mobile phones and other sources. It is anticipated that these base stations will continue to use more GaN-based RF components in the near future. High-power density, power added efficiency (PAE), gain, and ease of impedance matching are only a few of GaN's exceptional qualities, which together enhance performance and dependability in telecom infrastructure applications.
Moreover, front-end components have to meet strict criteria from the telecom infrastructure industry. Maximum linearity and efficiency are necessary for transmission, whereas low noise figures are crucial for reception mode. Furthermore, high-volume production coupled with low-cost manufacturing capabilities is essential for commercial applications. These stringent requirements highlight the need for RF GaN devices to provide remarkable performance attributes while also guaranteeing affordability and expandability to satisfy the varied requirements of the telecommunications sector.
Asia Pacific is expected to hold the largest share of the RF gallium nitride market during the forecast period.
Asia Pacific to hold the largest share in the RF gallium nitride industry in 2028. Asia Pacific is the leading RF GaN market, driven mostly by demand from major nations like China, South Korea, and Japan, especially in the telecom infrastructure and satellite communication sectors. In the RF GaN market, the region is growing at a faster rate than other global areas. This increase can be ascribed to increased consciousness regarding the advantages of radiofrequency GaN devices and the increasing installation of 5G base station infrastructure, particularly in China. In addition, the growing demand for RF GaN devices in South Korea and China is driving market expansion in the area and establishing Asia Pacific as a major engine for growth in the worldwide RF GaN industry.
The RF gallium nitride companies is dominated by a few globally established players such as Sumitomo Electric Device Innovations, Inc. (Japan), Qorvo, Inc. (US), WOLFSPEED, INC. (US), NXP Semiconductors (Netherlands), MACOM (US). The study includes an in-depth competitive analysis of these key players in the RF GaN market, with their company profiles, recent developments, and key market strategies.
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